sot-89-3l 1. base 2. collector 3. emitter features z low current z high voltage aaplications z video output stages marking:da maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 250 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 250 v emitter-base breakdown voltage v (br)ebo i e =100a,i c =0 5 v collector cut-off current i cbo v cb =200v,i e =0 10 na emitter cut-off current i ebo v eb =5v,i c =0 50 na dc current gain h fe v ce =20v, i c =25ma 50 collector-emitter saturation voltage v ce(sat) i c =30ma,i b =5ma 0.6 v transition frequency f t v ce =10v,i c =10ma, f=100mhz 60 mhz symbol parameter value unit v cbo collector-base voltage 250 v v ceo collector-emitter voltage 250 v v ebo emitter-base voltage 5 v i c collector current 50 ma p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 BF622 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
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